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Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing 期刊论文
semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573
Yi WB; Zhang EX; Chen M; Li N; Zhang GQ; Liu ZL; Wang X
收藏  |  浏览/下载:179/57  |  提交时间:2010/03/09
LAYERS  
Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 49-54
作者:  Xu B
收藏  |  浏览/下载:58/0  |  提交时间:2010/08/12
Nano-layer structure of silicon-on-insulator materials 会议论文
11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002
Wang X; Chen M; Chen J; Wang X; Dong YN; Liu XH; He P; Tian LL; Liu ZL
收藏  |  浏览/下载:16/0  |  提交时间:2010/11/15
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308
作者:  Xu B;  Li CM;  Jin P;  Ye XL;  Li DB
收藏  |  浏览/下载:97/0  |  提交时间:2010/08/12
Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
作者:  Xu B;  Jiang DS;  Wang ZG
收藏  |  浏览/下载:85/7  |  提交时间:2010/08/12
Self-assembled quantum dots, wires and quantum-dot lasers 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1132-1139
作者:  Xu B
收藏  |  浏览/下载:143/9  |  提交时间:2010/08/12
Structural characterization of cubic GaN grown on GaAs(001) substrates 期刊论文
chinese journal of electronics, 2001, 卷号: 10, 期号: 2, 页码: 219-222
Zheng XH; Qu B; Wang YT; Yang H; Liang JW; Han JY
收藏  |  浏览/下载:93/4  |  提交时间:2010/08/12
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏  |  浏览/下载:93/3  |  提交时间:2010/08/12
Self-assembled quantum dots, wires and quantum-dot lasers 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Xu B
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 607-612
作者:  Ye XL;  Xu B
收藏  |  浏览/下载:41/0  |  提交时间:2010/08/12


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