Structural characterization of cubic GaN grown on GaAs(001) substrates

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	Structural characterization of cubic GaN grown on GaAs(001) substrates
	Zheng XH ; Qu B ; Wang YT ; Yang H ; Liang JW ; Han JY
刊名	chinese journal of electronics
	2001
卷号	10 期号:2 页码:219-222
关键词	cubic GaN X-ray double crystal diffraction structural characteristics CONTINUOUS-WAVE OPERATION EPITAXIAL-GROWTH HEXAGONAL GAN LASER-DIODES THIN-FILMS MBE
ISSN号	1022-4653
通讯作者	zheng xh,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	structural characteristics of cubic gan epilayers grown on gaas(001) were studied using x-ray double-crystal diffraction technique. the structure factors of cubic gan(002) and (004) components are approximately identical. however, the integrated intensities of the rocking curve for cubic (002) components are over five times as those of (004) components. the discrepancy has been interpreted in detail considering other factors. in the conventional double crystal rocking curve, the peak broadening includes such information caused by the orientation distribution (mosaicity) and the distribution of lattice spacing. these two kinds of distributions can be distinguished by the triple-axis diffraction in which an analyser crystal is placed in front of the detector. moreover, the peak broadening was analysed by reciprocal lattice construction and eward sphere. by using triple-axis diffraction of cubic (002) and (113) components, domain size and dislocation density were estimated. the fully relaxed lattice parameter of cubic gan was determined to be about 0.451 +/- 0.001nm.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12230]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zheng XH,Qu B,Wang YT,et al. Structural characterization of cubic GaN grown on GaAs(001) substrates[J]. chinese journal of electronics,2001,10(2):219-222.
APA	Zheng XH,Qu B,Wang YT,Yang H,Liang JW,&Han JY.(2001).Structural characterization of cubic GaN grown on GaAs(001) substrates.chinese journal of electronics,10(2),219-222.
MLA	Zheng XH,et al."Structural characterization of cubic GaN grown on GaAs(001) substrates".chinese journal of electronics 10.2(2001):219-222.