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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05
The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 1, 页码: 91-93
Sun LL; Yan FW; Wang JX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：219/46  |  提交时间：2010/03/08
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Mechanical and tribological properties of epitaxial cubic boron nitride thin films grown on diamond 期刊论文
advanced engineering materials, 2008, 卷号: 10, 期号: 5, 页码: 482-487
作者:  Zhang XW
收藏  |  浏览/下载：71/10  |  提交时间：2010/03/08
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 1, 页码: art.no.015402
Wu JJ (Wu Jiejun); Zhang GY (Zhang Guoyi); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping)
收藏  |  浏览/下载：122/0  |  提交时间：2010/03/29
Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409
Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin)
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11

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