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科研机构
半导体研究所 [26]
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期刊论文 [26]
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2011 [1]
2010 [2]
2009 [2]
2008 [1]
2006 [4]
2005 [2]
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半导体材料 [26]
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InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402
作者:
Hou QF
;
Yin HB
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  |  
浏览/下载:43/6
  |  
提交时间:2011/07/05
InGaN
solar cell
multiple quantum wells
IN1-XGAXN ALLOYS
BAND-GAP
INN
The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
期刊论文
solid state communications, 2010, 卷号: 150, 期号: 41-42, 页码: 1991-1994
Song HP (Song H. P.)
;
Zheng GL (Zheng G. L.)
;
Yang AL (Yang A. L.)
;
Guo Y (Guo Y.)
;
Wei HY (Wei H. Y.)
;
Li CM (Li C. M.)
;
Yang SY (Yang S. Y.)
;
Liu XL (Liu X. L.)
;
Zhu QS (Zhu Q. S.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/27
ZnO
In2O3
MOCVD
Photoelectron spectroscopies
IN2O3-ZNO FILMS
TRANSPARENT
OXIDE
SEMICONDUCTORS
INN
Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism
期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
Peng YC (Peng Ying-Cai)
;
Fan ZD (Fan Zhi-Dong)
;
Bai ZH (Bai Zhen-Hua)
;
Ma L (Ma Lei)
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  |  
浏览/下载:140/29
  |  
提交时间:2010/04/21
silicon nanowires
Au-Si liquid droplet alloys
solid-liquid-solid growth
structural characteristics
SI NANOWIRES
NI CATALYSTS
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
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  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:
Song HP
;
Wei HY
;
Zhang B
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  |  
浏览/下载:198/0
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
semiconductor heterojunctions
semiconductor materials
valence bands
X-ray photoelectron spectra
Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 073903
Shi, H
;
Duan, Y
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  |  
浏览/下载:44/2
  |  
提交时间:2010/03/08
HIGH CURIE-TEMPERATURE
SPINODAL-DECOMPOSITION
ROOM-TEMPERATURE
1ST PRINCIPLES
THIN-FILMS
SEMICONDUCTORS
FERROMAGNETISM
STABILIZATION
GROWTH
PHASE
Investigation of Mn-doped Si films prepared by magnetron cosputtering
期刊论文
journal of crystal growth, 2006, 卷号: 291, 期号: 1, 页码: 239-242
作者:
Yin ZG
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  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
Mn doping
magnetron sputtering
MnxSi1-x
diluted magnetic
THIN-FILMS
SPIN-PHOTONICS
SEMICONDUCTORS
GROWTH
FERROMAGNETISM
SPINTRONICS
Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots
期刊论文
electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:77/0
  |  
提交时间:2010/04/11
SEMICONDUCTOR-DEVICES
TRANSPORT
STATES
BISTABILITY
VOLTAGE
LASERS
DIODE
High quality microcrystalline Si films by hydrogen dilution profile
期刊论文
thin solid films, 2006, 卷号: 515, 期号: 2, 页码: 452-455
Gu JH (Gu Jinhua)
;
Zhu MF (Zhu Meifang)
;
Wang LJ (Wang Liujiu)
;
Liu FZ (Liu Fengzhen)
;
Zhou BQ (Zhou Bingqing)
;
Ding K (Ding Kun)
;
Li GH (Li Guohua)
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  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
microcrystalline Si thin film
hydrogen dilution profiling
incubation layer
uniformity
CHEMICAL-VAPOR-DEPOSITION
THIN
ALLOYS
CVD
Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
期刊论文
solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 606-610
作者:
Jin P
;
Xu B
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  |  
浏览/下载:100/0
  |  
提交时间:2010/04/11
nanostructures
semiconductors
optical properties
luminescence
WAVELENGTH
NANOSTRUCTURES
INTERBAND
LASERS
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