High quality microcrystalline Si films by hydrogen dilution profile

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	High quality microcrystalline Si films by hydrogen dilution profile
	Gu JH (Gu Jinhua) ; Zhu MF (Zhu Meifang) ; Wang LJ (Wang Liujiu) ; Liu FZ (Liu Fengzhen) ; Zhou BQ (Zhou Bingqing) ; Ding K (Ding Kun) ; Li GH (Li Guohua)
刊名	thin solid films
	2006
卷号	515 期号:2 页码:452-455
关键词	microcrystalline Si thin film hydrogen dilution profiling incubation layer uniformity CHEMICAL-VAPOR-DEPOSITION THIN ALLOYS CVD
ISSN号	0040-6090
通讯作者	zhu, mf, chinese acad sci, grad sch, coll phys sci, pob 4588, beijing 100049, peoples r china. e-mail: mfzhu@gucas.ac.cn
中文摘要	novel hydrogen dilution profiling (hdp) technique was developed to improve the uniformity in the growth direction of mu c-si:h thin films prepared by hot wire chemical vapor deposition (hwcvd). it was found that the high h dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. a proper design of hydrogen dilution profiling improves the uniformity of crystalline content, x-c, in the growth direction and restrains the formation of micro-voids as well. as a result the compactness of mu c-si:h films with a high crystalline content is enhanced and the stability of mu c-si:h thin film against the oxygen diffusion is much improved. meanwhile the hdp mu c-si:h films exhibit the low defect states. the high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-si:h films. (c) 2006 published by elsevier b.v.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10346]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gu JH ,Zhu MF ,Wang LJ ,et al. High quality microcrystalline Si films by hydrogen dilution profile[J]. thin solid films,2006,515(2):452-455.
APA	Gu JH .,Zhu MF .,Wang LJ .,Liu FZ .,Zhou BQ .,...&Li GH .(2006).High quality microcrystalline Si films by hydrogen dilution profile.thin solid films,515(2),452-455.
MLA	Gu JH ,et al."High quality microcrystalline Si films by hydrogen dilution profile".thin solid films 515.2(2006):452-455.