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浏览/检索结果: 共2条，第1-2条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 X-ray diffraction  molecular beam epitaxy  semiconducting silicon compounds  LOW-TEMPERATURE GROWTH  FILMS