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High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载:125/38  |  提交时间:2010/03/29
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC
收藏  |  浏览/下载:18/1  |  提交时间:2010/10/29
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG
收藏  |  浏览/下载:27/0  |  提交时间:2010/11/15
Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 会议论文
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Tan LW; Wang J; Wang QY; Yu YH; Lin LY
收藏  |  浏览/下载:19/0  |  提交时间:2010/11/15
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW
收藏  |  浏览/下载:23/0  |  提交时间:2010/11/15
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15
The fabrication of thick SiO2 layer by anodization 会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Ou HY; Yang QQ; Lei HB; Wang QM; Hu XW
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/15
STRESS  GROWTH  
A one-way MOS analog switch 会议论文
5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998
Wu G; Shi Y
收藏  |  浏览/下载:7/0  |  提交时间:2010/10/29


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