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科研机构
半导体研究所 [20]
内容类型
会议论文 [20]
发表日期
2007 [1]
2006 [2]
2003 [2]
2002 [3]
2001 [4]
2000 [3]
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半导体材料 [20]
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学科主题:半导体材料
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Reliable concentrated photovoltaic system with compound concentrator
会议论文
solar world congress of the international-solar-energy-society, beijing, peoples r china, sep 18-21, 2007
作者:
Huang TM
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/09
SOLAR-CELLS
Growth and characterization of semi-insulating GaN films grown by MOCVD
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Fang, CB
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Wang, CM
;
Li, JM
收藏
  |  
浏览/下载:202/36
  |  
提交时间:2010/03/29
MOCVD
The study of high temperature annealing of a-SiC : H films
会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
收藏
  |  
浏览/下载:209/71
  |  
提交时间:2010/03/29
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ION-SCATTERING SPECTROSCOPY
LATTICE POLARITY
SINGLE-CRYSTALS
FILMS
POLARIZATION
GAN(0001)
SURFACES
GROWTH
DIODES
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells
会议论文
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Deng X
;
Wang W
;
Han S
;
Povolny H
;
Du W
;
Liao X
;
Xiang X
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
indium phosphide
semi-insulating
annealing
PICTS
photoluminescence
SEMIINSULATING INP
INDIUM-PHOSPHIDE
FE
PHOTOLUMINESCENCE
TEMPERATURE
Silicon: the promising material for phontonic integrated circuits platform
会议论文
6th world multi-conference on systemics, cybernetics and informatics (sci 2002)/8th international conference on information systems analysis and synthesis (isas 2002), orlando, fl, jul 14-18, 2002
Yan QF
;
Yu JZ
;
Liu ZL
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/10/29
silicon
photonic integration
OEIC's
PIC's
ON-INSULATOR
OPTOELECTRONICS
COUPLER
SWITCH
Epitaxial growth of SiC on complex substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Sun GS
;
Li JM
;
Luo MC
;
Zhu SR
;
Wang L
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
optical microscopy
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
SAPPHIRE
DEPOSITION
FILMS
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM
;
Sun GS
;
Zhu SR
;
Wang L
;
Luo MC
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
X-ray diffraction
molecular beam epitaxy
semiconducting silicon compounds
LOW-TEMPERATURE GROWTH
FILMS
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