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A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells 期刊论文
Journal of Physics D: Applied Physics, 2017, 卷号: 50, 期号: 2017, 页码: 475104 (9pp)
作者:  Yu Jiang;  Yun Xu;  Haoyue Wu;  Jian Li;  Lin Bai
收藏  |  浏览/下载：17/0  |  提交时间：2018/11/30
Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes 期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 14, 页码: 145104
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
收藏  |  浏览/下载：23/0  |  提交时间：2017/03/10
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
journal of applied physics, 2015, 卷号: 117, 页码: 055709
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：16/0  |  提交时间：2016/03/23
Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum 期刊论文
applied physics letters, 2015, 卷号: 106, 页码: 091101
Xingsheng Xu
收藏  |  浏览/下载：14/0  |  提交时间：2016/03/22
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 6, 页码: 068801
Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Li, L; Wu, LL; Le, LC; Li, XJ; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载：15/0  |  提交时间：2015/04/02
Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 11, 页码: 116103
He Chao; Liu Zhi; Zhang Xu; Huang Wen-Qi; Xue Chun-Lai; Cheng Bu-Wen
收藏  |  浏览/下载：13/0  |  提交时间：2015/03/20
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
收藏  |  浏览/下载：22/0  |  提交时间：2014/04/30
Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 14, 页码: 143706
Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09
Ge-Si quantum dots thin film solar cells 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 8, 页码: 082101
Liu, Zhi; Zhou, Tianwei; Li, Leliang; Zuo, Yuhua; He, Chao; Li, Chuanbo; Xue, Chunlai; Cheng, Buwen; Wang, Qiming
收藏  |  浏览/下载：13/0  |  提交时间：2014/04/04
Suppression of thermal degradation of InGaN_GaN quantum wells in green laser diode structures during the epitaxial growth 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 15, 页码: 152109
Zengcheng LiJianping LiuMeixin FengKun ZhouShuming ZhangHui WangDeyao LiLiqun ZhangDegang ZhaoDesheng JiangHuaibing WangHui Yang
收藏  |  浏览/下载：12/0  |  提交时间：2014/04/09

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