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Growth parametric study of N-polar InGaN films by metalorganic chemical vapor deposition 期刊论文
superlattices and microstructures, 2016, 卷号: 91, 页码: 259-268
Fan Yang; Yuan-tao Zhang; Xu Han; Peng-chong Li; Jun-yan Jiang; Zhen Huang; Jing-zhi Yin; De-gang Zhao; Bao-lin Zhang; Guo-tong Du
收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10
Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition 期刊论文
vacuum, 2015, 卷号: 119, 期号: 2015, 页码: 63e67
Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du
收藏  |  浏览/下载：14/0  |  提交时间：2016/03/23
Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition 期刊论文
acta physica sinica, 2013, 卷号: 62, 期号: 8, 页码: 086102
Wu Liang-Liang, Zhao De-Gang, Li Liang, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng
收藏  |  浏览/下载：19/0  |  提交时间：2014/05/16
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文
journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Zhu, JJ; Fan, YM; Zhang, H; Lu, GJ; Wang, H; Zhao, DG; Jiang, DS; Liu, ZS; Zhang, SM; Chen, GF; Zhang, BS; Yang, H
收藏  |  浏览/下载：17/0  |  提交时间：2013/02/27
Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 期刊论文
guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033
Zhou, Zhi-Wen; He, Jing-Kai; Li, Cheng; Yu, Jin-Zhong
收藏  |  浏览/下载：46/0  |  提交时间：2012/06/13
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM
收藏  |  浏览/下载：66/3  |  提交时间：2011/07/05
Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 068103
作者:  Su SJ
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/07
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05
Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 68103
Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM
收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：73/4  |  提交时间：2011/07/05

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