Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates

	Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates
	Su SJ
刊名	chinese physics b
	2011
卷号	20 期号:6 页码:art. no. 068103
关键词	GeSn alloys strained strain-relaxed molecular beam epitaxy
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2011-07-07 ; 2011-07-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21398]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Su SJ. Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates[J]. chinese physics b,2011,20(6):art. no. 068103.
APA	Su SJ.(2011).Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates.chinese physics b,20(6),art. no. 068103.
MLA	Su SJ."Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates".chinese physics b 20.6(2011):art. no. 068103.