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CORC

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Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载：71/4  |  提交时间：2011/07/05
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101
Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载：55/3  |  提交时间：2011/07/05
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912
Yang T (Yang, Tao); Tatebayashi J (Tatebayashi, Jun); Aoki K (Aoki, Kanna); Nishioka M (Nishioka, Masao); Arakawa Y (Arakawa, Yasuhiko)
收藏  |  浏览/下载：57/0  |  提交时间：2010/03/29
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载：83/0  |  提交时间：2010/04/11
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.)
收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Thermal stress analysis for GaInAsP multiple quantum well wafer chemically bonded to Si (100) 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 2, 页码: art.no.023513
Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen)
收藏  |  浏览/下载：32/0  |  提交时间：2010/04/11
Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 3, 页码: 521-523
作者:  Xu YQ
收藏  |  浏览/下载：65/21  |  提交时间：2010/03/09
Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing 会议论文
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
作者:  Xu YQ
收藏  |  浏览/下载：19/0  |  提交时间：2010/10/29

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