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Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG
收藏  |  浏览/下载:26/0  |  提交时间:2018/11/30
Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
作者:  Jing Yang;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Jianjun Zhu
收藏  |  浏览/下载:29/0  |  提交时间:2018/11/30
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载:20/0  |  提交时间:2018/07/11
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文
physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228
X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang
收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10
Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes 期刊论文
chinese optics letters, 2016, 卷号: 14, 期号: 6, 页码: 062502
Xiang Li; Degang Zhao
收藏  |  浏览/下载:10/0  |  提交时间:2017/03/10
Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 卷号: 33, 期号: 1, 页码: 011209
Lingcong Le; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaojing Li; Xiaoguang He; Jianping Liu; Shuming Zhang; Hui Yang
收藏  |  浏览/下载:17/0  |  提交时间:2016/03/23
The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
physica status solidi a-applications and materials science, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
P. Chen; D.G. Zhao; D.S. Jiang; J.J. Zhu; Z.S. Liu; L.C. Le; J. Yang; X. Li; L. Q. Zhang; J.P. Liu; S.M. Zhang; H. Yang
收藏  |  浏览/下载:9/0  |  提交时间:2016/03/22
Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes 期刊论文
optics express, 2014, 卷号: 22, 期号: 10, 页码: 11392-11398
Le, LC; Zhao, DG; Jiang, DS; Yang, H; Chen, P; Liu, ZS; Yang, J; He, XG; Li, XJ; Liu, JP; Zhu, JJ; Zhang, SM
收藏  |  浏览/下载:22/0  |  提交时间:2015/03/25
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging 期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 11, 页码: 113115
Zhu JH; Ning JQ; Zheng CC; Xu SJ; Zhang SM; Yang H
收藏  |  浏览/下载:71/0  |  提交时间:2012/02/06


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