The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content

	The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content
	X. Li ; D. G. Zhao* ; D. S. Jiang ; P. Chen ; Z. S. Liu ; J. J. Zhu ; J. Yang ; W. Liu ; X. G. He ; X. J. Li ; F. Liang ; L. Q. Zhang ; J. P. Liu ; H. Yang
刊名	physica status solidi (a)
	2016
卷号	213 期号:8 页码:2223–2228
学科主题	光电子学
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27876]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	X. Li,D. G. Zhao*,D. S. Jiang,et al. The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content[J]. physica status solidi (a),2016,213(8):2223–2228.
APA	X. Li.,D. G. Zhao*.,D. S. Jiang.,P. Chen.,Z. S. Liu.,...&H. Yang.(2016).The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content.physica status solidi (a),213(8),2223–2228.
MLA	X. Li,et al."The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content".physica status solidi (a) 213.8(2016):2223–2228.