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期刊论文 [9]
发表日期
2019 [9]
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Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 7
作者:
Xu, Meng
;
Yan, Jian-Min
;
Chen, Ting-Wei
;
Xu, Zhi-Xue
;
Wang, Hui
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  |  
浏览/下载:70/0
  |  
提交时间:2019/12/26
electrical properties
ferroelectric field effect
ionic liquids
oxide semiconductors
PMN-PT single crystals
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:
Wang, Die
;
He, Gang
;
Liang, Shuang
;
Liu, Mao
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  |  
浏览/下载:56/0
  |  
提交时间:2020/03/31
Dy2O3 gate dielectrics
High-k
Annealing temperature
Optical properties
Electrical characteristics
A highly sensitive and versatile chiral sensor based on a top-gate organic field effect transistor functionalized with thiolated β-cyclodextrin.
期刊论文
The Analyst, 2019, 卷号: Vol.144 No.8, 页码: 2611-2617
作者:
Wang, X.a
;
Wang, Y.b,c
;
Wu, Y.a
;
Xiao, Y.a
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  |  
浏览/下载:3/0
  |  
提交时间:2019/11/21
Fully Printed Top-Gate Metal-Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 445-450
作者:
Li, Yuzhi[1]
;
Lan, Linfeng[2]
;
Hu, Shiben[3]
;
Gao, Peixiong[4]
;
Dai, Xingqiang[5]
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  |  
浏览/下载:19/0
  |  
提交时间:2019/04/22
Inkjet printing
scandium zirconium oxide (Sc1Zr1Ox)
thin-film transistors (TFTs)
top gate
Multibit Optoelectronic Memory in Top-Floating-Gated van der Waals Heterostructures
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 36
作者:
Huang, Wenhao
;
Yin, Lei
;
Wang, Feng
;
Cheng, Ruiqing
;
Wang, Zhenxing
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  |  
浏览/下载:90/0
  |  
提交时间:2019/12/05
multibit storage ability
nonvolatile optoelectronic memory
top floating gate
van der Waals heterostructures
Transparent and Flexible Thin-Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 2
作者:
Chen, Xue
;
Zhang, Guozhen
;
Wan, Jiaxian
;
Guo, Tao
;
Li, Lei
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  |  
浏览/下载:26/0
  |  
提交时间:2019/12/05
aluminum
atomic layer deposition
bottom gate/top contacts
oxide
thin-film transistors
zinc oxide
Lateral scaling and positioning effects of top-gate electrodes on single-molecule field-effect transistors
期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2019, 卷号: 31, 期号: 28
作者:
Xu, Yuqing
;
Wang, Meishan
;
Fang, Changfeng
;
Cui, Bin
;
Ji, Guomin
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  |  
浏览/下载:23/0
  |  
提交时间:2019/12/11
field-effect transistor
electronic transport property
density
functional theory
non-equilibrium Green's function
molecular
electronics
Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition
期刊论文
Advanced Electronic Materials, 2019, 卷号: Vol.5 No.2
作者:
Xue Chen
;
Guozhen Zhang
;
Jiaxian Wan
;
Tao Guo
;
Lei Li
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  |  
浏览/下载:13/0
  |  
提交时间:2019/12/17
aluminum
atomic
layer
deposition
bottom
gate/top
contacts
oxide
thin‐film
transistors
zinc
oxide
Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:
L.Wang
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浏览/下载:0/0
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提交时间:2020/08/24
chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics
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