Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition

doi:10.1002/aelm.201900393

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
	L.Wang; L.Chen; S.L.Wong; X.Huang; W.G.Liao; C.X.Zhu
刊名	Advanced Electronic Materials
	2019
卷号	5 期号:8 页码:10
关键词	chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics
ISSN号	2199-160X
DOI	10.1002/aelm.201900393
英文摘要	2D layered materials such as graphene and transition-metal dichalcogenides (TMDCs) have emerged as promising candidates for next-generation nanoelectronic applications due to their atomically thin thicknesses and unique electronic properties. Among TMDCs, molybdenum disulfide (MoS2) has been extensively investigated as a channel material for field-effect transistor (FET) and circuit realization. However, to date most reported works have been limited to exfoliated MoS2 nanosheets primarily due to the difficulty in synthesizing large-area and high-quality MoS2 thin film. A demonstration of wafer-scale monolayer MoS2 synthesis is reported by chemical vapor deposition (CVD), enabling transistors, memristive memories, and integrated circuits to be realized simultaneously. Specifically, building on top-gated FETs with a high-kappa gate dielectric (HfO2), Boolean logic circuits including inverters and NAND gates are successfully demonstrated using direct-coupled FET logic technology, with typical inverters exhibiting a high voltage gain of 16, a large total noise margin of 0.72 V-DD at V-DD = 3 V, and perfect logic-level matching. Additionally, resistive switching is demonstrated in a MoS2-based memristor, indicating that they have great potential for the development of resistive random-access memory. By virtue of scalable CVD growth capability, the way toward practical and large-scale electronic applications of MoS2 is indicated
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/63000]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	L.Wang,L.Chen,S.L.Wong,et al. Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition[J]. Advanced Electronic Materials,2019,5(8):10.
APA	L.Wang,L.Chen,S.L.Wong,X.Huang,W.G.Liao,&C.X.Zhu.(2019).Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition.Advanced Electronic Materials,5(8),10.
MLA	L.Wang,et al."Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition".Advanced Electronic Materials 5.8(2019):10.