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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2015     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? 期刊论文 PLOS ONE, 2015 Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 GAN  TRANSPORT  DEFECT  LAYERS  HFETS   Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 85, 页码: 43-49 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Sapphire substrate thickness  Strain   A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 79, 页码: 21-28 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Strain  Ohmic contact   Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors 期刊论文 Chinese Physics B, 2015, 卷号: 24, 期号: 11, 页码: 410-413 作者:  Yang M(杨铭);  Lin ZJ(林兆军);  Zhao JT(赵景涛);  Wang YT(王玉堂);  Li ZY(李志远) 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 AlGaN/GaN heterostructure field effect transistors(HFETs)  switching characteristics  substrate bias   Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Superlattices and microstructures, 2015, 页码: 43-49 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Sapphire substrate thickness  Strain   A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Superlattices and microstructures, 2015, 页码: 21-28 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Strain  Ohmic contact