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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2014     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 半导体学报（英文版）, 2014, 期号: 9, 页码: 65-70 作者:  Luan Chongbiao;  Lin Zhaojun;  Lü Yuanjie;  Feng Zhihong;  Zhao Jingtao 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Ⅲ-Ⅴ nitride and AlGaAs/GaAs HFETs  polarization Coulomb field scattering  2DEG electron mobility   Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Physica, E. Low-dimensional systems & nanostructures, 2014, 页码: 76-79 作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Zhihong Feng;  Jingtao Zhao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN HFETs   Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 期号: 09, 页码: 69-74 作者:  Luan CB(栾崇彪);  Lin ZJ(林兆军);  Lv YJ(吕元杰);  Feng ZH(冯志红);  Zhao JT(赵景涛) 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 III–V nitride and AlGaAs/GaAs HFETs  polarization Coulomb field scattering  2DEG electron mobility   Comparison for the carrier mobility between the III-V nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 卷号: 35, 期号: 9 作者:  Luan, Chongbiao;  Lin, Zhaojun;  , Yuanjie;  Feng, Zhihong;  Zhao, Jingtao 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 2DEG electron mobility  III-V nitride and AlGaAs/GaAs HFETs  polarization Coulomb field scattering   Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 卷号: 62, 页码: 76-79 作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Feng, Zhihong;  Zhao, Jingtao 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN  HFETs