QQ客服 官方微博 反馈留言

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2010    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292 Cai LE; Zhang BP; Zhang JY; Wu CM; Jiang F; Hu XL; Chen M; Wang QM 收藏  |  浏览/下载：43/1  |  提交时间：2011/07/05 DIODES   AlGaInP LED with surface structure of two-dimensional photonic crystal 期刊论文 acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8083-8087 Chen YX (Chen Yi-Xin); Zheng WH (Zheng Wan-Hua); Chen W (Chen Wei); Chen LH (Chen Liang-Hui); Tang YD (Tang Yi-Dan); Shen GD (Shen Guang-Di) 收藏  |  浏览/下载：33/0  |  提交时间：2010/12/27 AlGaInP LED  photonic crystal  light extraction efficiency  luminous intensity  LIGHT-EMITTING-DIODES  ENHANCEMENT  EXTRACTION  EFFICIENCY   Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05 GaN  light emitting diode  surface treatment  leakage current  THREADING DISLOCATION DENSITIES  LAYERS  NI/AU  LEDS   Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 23, 页码: article no.233304 Ran GZ; Jiang DF; Kan Q; Chen HD 收藏  |  浏览/下载：45/3  |  提交时间：2011/07/05 DIODES  PHOTONICS  PLASMONICS  EFFICIENCY   An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS 收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04 Nitride materials  Crystal growth  X-ray diffraction  TIME-RESOLVED PHOTOLUMINESCENCE  LIGHT-EMITTING-DIODES  PIEZOELECTRIC FIELDS  LASER-DIODES  DEPENDENCE  RECOMBINATION  POLARIZATION  DYNAMICS  GROWTH  MOCVD   Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity 期刊论文 applied physics express, 2010, 卷号: 3, 期号: 7, 页码: art. no. 072001 Huang ZL (Huang Zengli); Wang JF (Wang Jianfeng); Liu ZH (Liu Zhenghui); Xu K (Xu Ke); Yang H (Yang Hui); Cao B (Cao Bing); Han Q (Han Qin); Zhang GJ (Zhang Guiju); Wang CH (Wang Chinhua) 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/17 LIGHT-EMITTING-DIODES