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InAs/GaSb II型超晶格红外探测器材料分子束外延生长研究 学位论文
硕士, 上海微系统与信息技术研究所: 中国科学院上海微系统与信息技术研究所, 2009
李健
收藏  |  浏览/下载:98/0  |  提交时间:2012/03/06
EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR 期刊论文
MODERN PHYSICS LETTERS B, 2009, 卷号: 23, 期号: 15, 页码: 1881-1887
Zhang, B; Chen, J; Wang, X; Wu, AM; Luo, JX; Wang, X; Zhang, MA; Wu, YX; Zhu, JJ; Yang, H
收藏  |  浏览/下载:9/0  |  提交时间:2011/11/04
Exciton localization effect in Mn-implanted GaN by photoluminescence measurements 期刊论文
PHYSICA B-CONDENSED MATTER, 2009, 卷号: 404, 期号: 8-11, 页码: 1222-1225
Meng, XY; Zhang, YH; Shen, WZ
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/24
Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2009, 卷号: 52, 期号: 1, 页码: 52-56
Zhang, YG(张永刚); Gu, Y; Tian, ZB; Li, AZ; Zhu, XR; Wang, K
收藏  |  浏览/下载:19/0  |  提交时间:2012/03/24
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: 64211-64211
Chen, T; Hong, T; Pan, JQ; Chen, WX; Cheng, YB; Wang, Y; Ma, XB; Liu, WL; Zhao, LJ; Ran, GZ; Wang, W; Qin, GG
收藏  |  浏览/下载:15/0  |  提交时间:2012/03/24
The synthesis and fabrication of horizontally aligned single-walled carbon nanotubes suspended across wide trenches for infrared detecting application 期刊论文
NANOTECHNOLOGY, 2009, 卷号: 20, 期号: 5, 页码: 55501-55501
Rao, FB; Liu, X; Li, T; Zhou, YX; Wang, YL
收藏  |  浏览/下载:21/0  |  提交时间:2011/12/17
Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 7, 页码: 1703-1706
Li, J; Gong, Q; Li, SG; Li, AZ; Lin, C
收藏  |  浏览/下载:11/0  |  提交时间:2012/03/24
Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 mu m range 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 7, 页码: 1935-1938
Gu, Y; Zhang, YG(张永刚); Wang, K; Li, AZ; Li, YY
收藏  |  浏览/下载:6/0  |  提交时间:2012/03/24
Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 7, 页码: 1703-1706
Li, J; Gong, Q; Li, SG; Li, AZ; Lin, C
收藏  |  浏览/下载:14/0  |  提交时间:2013/05/10
Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 mu m range 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 期号: 7, 页码: 1935-1938
Gu, Y; Zhang, YG(重点实验室); Wang, K; Li, AZ; Li, YY
收藏  |  浏览/下载:13/0  |  提交时间:2013/05/10


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