Exciton localization effect in Mn-implanted GaN by photoluminescence measurements

	Exciton localization effect in Mn-implanted GaN by photoluminescence measurements
	Meng, XY ; Zhang, YH ; Shen, WZ
刊名	PHYSICA B-CONDENSED MATTER
	2009
卷号	404 期号:8-11 页码:1222-1225
关键词	CHEMICAL-VAPOR-DEPOSITION MAGNETIC-PROPERTIES THIN-FILMS POTENTIAL FLUCTUATIONS SEMICONDUCTORS TEMPERATURE TRANSITIONS EPILAYERS LAYERS LEVEL
ISSN号	0921-4526
通讯作者	Zhang, YH, Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, 1954 Hua Shan Rd, Shanghai 200030, Peoples R China
学科主题	Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/94769]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Meng, XY,Zhang, YH,Shen, WZ. Exciton localization effect in Mn-implanted GaN by photoluminescence measurements[J]. PHYSICA B-CONDENSED MATTER,2009,404(8-11):1222-1225.
APA	Meng, XY,Zhang, YH,&Shen, WZ.(2009).Exciton localization effect in Mn-implanted GaN by photoluminescence measurements.PHYSICA B-CONDENSED MATTER,404(8-11),1222-1225.
MLA	Meng, XY,et al."Exciton localization effect in Mn-implanted GaN by photoluminescence measurements".PHYSICA B-CONDENSED MATTER 404.8-11(2009):1222-1225.