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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2008    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/09 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TEMPERATURE  TRANSISTORS  GROWTH  MOCVD  LAYER   Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112 Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/08 P-TYPE GAN  MOLECULAR-BEAM EPITAXY  AUGMENTED-WAVE METHOD  VAPOR-PHASE EPITAXY  ELECTRICAL-PROPERTIES  OXYGEN  ACTIVATION  SILICON   High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文 journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516 Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A 收藏  |  浏览/下载：74/0  |  提交时间：2010/03/08 STRESS  SI(111)  REDUCTION  THICKNESS   Investigation on the structural origin of n-type conductivity in InN films 期刊论文 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403 Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H 收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  GAN FILMS  DISLOCATION SCATTERING  LAYER THICKNESS  INDIUM NITRIDE  BAND-GAP  VACANCIES   Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM 收藏  |  浏览/下载：42/0  |  提交时间：2010/03/09 AlGaN  GaN template  A1N interlayer  MOCVD  crack  interference fringes   Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 266-269 Wang, XH; Wang, XL; Feng, C; Xiao, HL; Yang, CB; Wang, JX; Wang, BZ; Ran, JX; Wang, CM 收藏  |  浏览/下载：75/8  |  提交时间：2010/03/08 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TRANSISTORS  TEMPERATURE  SURFACES  PT/GAN  GROWTH  PD/GAN  MOCVD   High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327 She-Song, H; Zhi-Chuan, N; Feng, Z; Hai-Qiao, N; Huan, Z; Dong-Hai, W; Zheng, S 收藏  |  浏览/下载：42/3  |  提交时间：2010/03/08 molecular beam epitaxy  quantum dots  a modified two-step growth   Mechanical and tribological properties of epitaxial cubic boron nitride thin films grown on diamond 期刊论文 advanced engineering materials, 2008, 卷号: 10, 期号: 5, 页码: 482-487 作者:  Zhang XW 收藏  |  浏览/下载：72/10  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION