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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2007    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文 journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521 Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H 收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  X-RAY-DIFFRACTION  MG-DOPED GAN  UNDOPED GAN  PHOTOLUMINESCENCE BANDS  THREADING DISLOCATIONS  POSITRON-ANNIHILATION  GROWTH STOICHIOMETRY  GALLIUM NITRIDE   Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 1, 页码: 294-298 Jahn U (Jahn Uwe); Jiang DS (Jiang De-Sheng); Ploog KH (Ploog Klaus H.); Wang XL (Wang Xiaolan); Zhao DG (Zha0 Degang); Yang H (Yang, Hui) 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE 期刊论文 journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 176-178 Ding Y (Ding Ying); Zhou F (Zhou Fan); Chen WX (Chen Wei-xi); Wang W (Wang Wei) 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29 buried heterostructure (BH)   Broad-band semiconductor optical amplifiers 期刊论文 journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 208-211 Ding Y (Ding Ying); Kan Q (Kan Qiang); Wang JL (Wang Jun-ling); Pan JQ (Pan Jiao-qing); Zhou F (Zhou Fan); Chen WX (Chen Wei-xi); Wang W (Wang Wei) 收藏  |  浏览/下载：158/0  |  提交时间：2010/03/29 semiconductor optical amplifiers (SOAs)   Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文 physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891 Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui) 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文 journal of crystal growth, 2007, 卷号: 303, 期号: 2, 页码: 414-418 作者:  Zhang SM;  Yang H;  Zhu JJ;  Jiang DS;  Yang H 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/29 V/III ratio   Deep level and photoluminescence studies of Er-implanted GaN films 期刊论文 journal of luminescence, 2007, 卷号: 122 sp.iss.si, 期号: 0, 页码: 365-367 Song SF; Chen WD; Hsu CC; Xu XR 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 GaN   Equilateral-triangle-resonator injection lasers with directional emission 期刊论文 ieee journal of quantum electronics, 2007, 卷号: 43, 期号: 5-6, 页码: 440-444 Chen Q (Chen Qin); Hu YH (Hu Yong-Hong); Huang YZ (Huang Yong-Zhen); Du Y (Du Yun); Fan ZC (Fan Zhong-Chao) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 equilateral-triangle-resonator (ETR) lasers   Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion 期刊论文 journal of crystal growth, 2007, 卷号: 309, 期号: 2, 页码: 140-144 Lin, T; Zheng, K; Wang, CL; Ma, XY 收藏  |  浏览/下载：37/3  |  提交时间：2010/03/08 diffusion  metalorganic vapor phase epitaxy  semiconducting III-V materials  laser diodes