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浏览/检索结果: 共22条，第1-10条 帮助 限定条件 发表日期：2006    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study 期刊论文 physical review b, 2006, 卷号: 73, 期号: 20, 页码: art.no.205205 Tan PH (Tan P. H.); Luo XD (Luo X. D.); Xu ZY (Xu Z. Y.); Zhang Y (Zhang Y.); Mascarenhas A (Mascarenhas A.); Xin HP (Xin H. P.); Tu CW (Tu C. W.); Ge WK (Ge W. K.) 收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11 HOT PHOTOLUMINESCENCE  GALLIUM-ARSENIDE  GAAS  SEMICONDUCTORS  LUMINESCENCE  SCATTERING   Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412 Song SF; Chen WD; Xu ZJ; Xu XR 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 GaN  Er  Pr-implautation  deep level transient spectroscopy  N-TYPE GAN  DEFECTS  EPITAXY  TRAPS   Synthesis of high quality n-type CdS nanobelts and their applications in nanodevices 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 20, 页码: art.no.203120 Ma RM (Ma R. M.); Dai L (Dai L.); Huo HB (Huo H. B.); Yang WQ (Yang W. Q.); Qin GG (Qin G. G.); Tan PH (Tan P. H.); Huang CH (Huang C. H.); Zheng J (Zheng J.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 WURTZITE ZNS  NANORIBBONS  LUMINESCENCE  NANOWIRES  GROWTH   1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏  |  浏览/下载：223/60  |  提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY  TEMPERATURE  PHOTOLUMINESCENCE  NITROGEN  ORIGIN  DIODES   The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文 journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497 Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：85/0  |  提交时间：2010/04/11 photoluminescence  molecular beam epitaxy  quantum wells  nitrides  semiconducting III-V materials  IMPROVED LUMINESCENCE EFFICIENCY  LASER-DIODES  TEMPERATURE  SURFACTANT  EMISSION  NITROGEN  ORIGIN   Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文 journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302 作者:  Jiang DS 收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11 ROOM-TEMPERATURE  SILICON  SEMICONDUCTORS  DISLOCATIONS  SPECTRA   Anti-Stokes photoluminescence in ZnO microcrystal 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.031902 Cao WT (Cao Weitao); Du WM (Du Weimin); Su FH (Su Fuhai); Li GH (Li Guohua) 收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11 TEMPERATURE-DEPENDENCE  UP-CONVERSION  ZINC-OXIDE  LUMINESCENCE  EXCITATION  ENERGY   Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582 Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  IMPROVED LUMINESCENCE EFFICIENCY  ORIGIN   Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 20, 页码: art.no.201917 Wang WJ; Yang XD; Ma BS; Sun Z; Su FH; Ding K; Xu ZY; Li GH; Zhang Y; Mascarenhas A; Xin HP; Tu CW 收藏  |  浏览/下载：68/0  |  提交时间：2010/04/11 PAIR LUMINESCENCE  GAP-N  GAAS  EXCITONS  ALLOY   Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 会议论文 3rd international conference on materials for advanced technologies/9th international conference on advanced materials, singapore, singapore, jul 03-08, 2005 Jiang, DS; Qu, YH; Ni, HQ; Wu, DH; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：110/24  |  提交时间：2010/03/29 molecular beam epitaxy