Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure

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	Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure
	Wang WJ ; Yang XD ; Ma BS ; Sun Z ; Su FH ; Ding K ; Xu ZY ; Li GH ; Zhang Y ; Mascarenhas A ; Xin HP ; Tu CW
刊名	applied physics letters
	2006
卷号	88 期号:20 页码:art.no.201917
关键词	PAIR LUMINESCENCE GAP-N GAAS EXCITONS ALLOY
ISSN号	0003-6951
通讯作者	wang, wj, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: wwjgr@mail.semi.ac.cn
中文摘要	the lifetimes of a series of n-related photoluminescence lines (a(2)-a(6)) in gaas1-xnx (x=0.1%) were studied under hydrostatic pressures at similar to 30 k. the lifetimes of a(5) and a(6) were found to increase rapidly with increasing pressure: from 2.1 ns at 0 gpa to more than 20 ns at 0.92 gpa for a(5) and from 3.2 ns at 0.63 gpa to 10.8 ns at 0.92 gpa for a(6). the lifetime is found to be closely correlated with the binding energy of the n impurity states, which is shown either in the pressure dependence for a given emission line or in the lifetime variation from a(2) to a(6). (c) 2006 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10666]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang WJ,Yang XD,Ma BS,et al. Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure[J]. applied physics letters,2006,88(20):art.no.201917.
APA	Wang WJ.,Yang XD.,Ma BS.,Sun Z.,Su FH.,...&Tu CW.(2006).Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure.applied physics letters,88(20),art.no.201917.
MLA	Wang WJ,et al."Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure".applied physics letters 88.20(2006):art.no.201917.