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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2006    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy 期刊论文 journal of applied physics, 2006, 卷号: 99, 期号: 3, 页码: art.no.034903 作者:  Xu YQ 收藏  |  浏览/下载：121/0  |  提交时间：2010/04/11 IMPROVED LUMINESCENCE EFFICIENCY  OPTICAL-PROPERTIES  LASERS  NITROGEN  ORIGIN   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文 electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：77/0  |  提交时间：2010/04/11 SEMICONDUCTOR-DEVICES  TRANSPORT  STATES  BISTABILITY  VOLTAGE  LASERS  DIODE   Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427 Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao) 收藏  |  浏览/下载：34/0  |  提交时间：2010/04/11 ion implantation  annealing  chemical etching  photoluminescence  POROUS SILICON  LUMINESCENCE   Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2187-2189 Wang BZ (Wang Bao-Zhu); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Wang XH (Wang Xin-Hua); Guo LC (Guo Lun-Chun); Xiao HL (Xiao Hong-Ling); Li JP (Li Jian-Ping); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 LIGHT-EMITTING-DIODES   Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots 期刊论文 solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 606-610 作者:  Jin P;  Xu B 收藏  |  浏览/下载：100/0  |  提交时间：2010/04/11 nanostructures  semiconductors  optical properties  luminescence  WAVELENGTH  NANOSTRUCTURES  INTERBAND  LASERS   Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文 journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706 作者:  Ye XL;  Xu B;  Jin P 收藏  |  浏览/下载：90/0  |  提交时间：2010/04/11 GAAS  SPECTROSCOPY  PARAMETERS  TRANSPORT  LASERS  ENERGY  STATES  HOLE   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS