Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

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	Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy
	Xu YQ
刊名	journal of applied physics
	2006
卷号	99 期号:3 页码:art.no.034903
关键词	IMPROVED LUMINESCENCE EFFICIENCY OPTICAL-PROPERTIES LASERS NITROGEN ORIGIN
ISSN号	0021-8979
通讯作者	zhao, h, chinese acad sci, inst semicond, natl lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: zhaohuan@red.semi.ac.cn
中文摘要	effect of rapid thermal annealing on photoluminescence (pl) properties of ingaas, inganas, ingaassb, and inganassb quantum wells (qws) grown by molecular-beam epitaxy was systematically investigated. variations of pl intensity and full width at half maximum were recorded from the samples annealed at different conditions. the pl peak intensities of ingaas and inganas qws initially increase and then decrease when the annealing temperature increased from 600 to 900 degrees c, but the drawing lines of ingaassb and inganassb take on an "m" shape. the enhancement of the pl intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. in the 800-900 degrees c high-temperature region, interdiffusion is likely the main factor influencing the pl intensity. in-n is easily formed during annealing which will prevent in out diffusion, so the largest blueshift was observed in ingaassb in the high-temperature region. (c) 2006 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10830]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu YQ. Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy[J]. journal of applied physics,2006,99(3):art.no.034903.
APA	Xu YQ.(2006).Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy.journal of applied physics,99(3),art.no.034903.
MLA	Xu YQ."Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy".journal of applied physics 99.3(2006):art.no.034903.