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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2006    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050 作者:  Zhang SM 收藏  |  浏览/下载：83/0  |  提交时间：2010/04/11 nitrides  multiple quantum wells  cracks  dislocations  vacancies x-ray diffraction  X-RAY-DIFFRACTION  EDGE DISLOCATIONS  GAN  FILMS  SUPERLATTICES  RELAXATION  STRAIN   Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114 Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION  ELECTRON-TRANSPORT  EPITAXIAL GAN  BAND-GAP  DISLOCATIONS  SAPPHIRE  ALN   Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates 会议论文 international symposium on biophotonics, nanophotonics and metamaterials, hangzhou, peoples r china, oct 16-18, 2006 作者:  Pan JQ;  Liang S 收藏  |  浏览/下载：57/7  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Measurement of threading dislocation densities in GaN by wet chemical etching 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 9, 页码: 1229-1235 作者:  Yang H;  Zhu JJ;  Yang H;  Wang H;  Wang H 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION   Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI   Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate 期刊论文 journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654 Zhao L (Zhao Lei); Zuo YH (Zuo Yuhua); Cheng BW (Cheng Buwen); Yu JZ (Yu Jinzhong); Wang QM (Wang Qiming) 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 Si1_xGex  Ge content  composition determination  double crystals X-ray diffraction (DCXRD)  micro-Raman measurement  BAND-GAP  HETEROSTRUCTURES  SUPERLATTICES  ALLOYS  RELAXATION  SCATTERING  THICKNESS  STRAIN   Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.241917 作者:  Jiang DS;  Zhu JJ;  Li XY;  Zhang SM;  Zhao DG 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  X-RAY-DIFFRACTION  MG-DOPED GAN  UNDOPED GAN  PHOTOLUMINESCENCE BANDS  THREADING DISLOCATIONS  POSITRON-ANNIHILATION  GROWTH STOICHIOMETRY  GALLIUM NITRIDE   Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文 science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732 Li DY (Li Deyao); Zhang SM (Zhang Shuming); Wang JF (Wang Jianfeng); Chen J (Chen Jun); Chen LH (Chen Lianghui); Chong M (Chong Ming); Zhu JJ (Zhu Jianjun); Zhao DG (Zhao Degang); Liu ZS (Liu Zongshun); Yang H (Yang Hui); Liang JW (Liang Junwu) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 metalorganic chemical vapor deposition (MOCVD)  GaN-hased laser diodes  multiple quantum well  ridge waveguide  threshold current  ELECTRICAL-PROPERTIES  GAN SUBSTRATE  CONTACTS   Study on Raman spectra of GaMnAs 期刊论文 journal of infrared and millimeter waves, 2006, 卷号: 25, 期号: 3, 页码: 207-212 Ma BS; Wang WJ; Su FH; Den JJ; Jiang CP; Liu HL; Ding K; Zhao JH; Li GH 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 GaMnAs  Raman spectrum  coupled plamon-LO-phonon mode  hole density  GAAS  (GA  MOCVD  FILMS  GAN  MN)AS   Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 11, 页码: art.no.112106 Zhao DG (Zhao D. G.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Jiang DS (Jiang D. S.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Wang YT (Wang Y. T.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：14/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION  SCATTERING  GROWTH  LAYERS