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	Semiconductor device
	HARA TOSHITAMI; NOJIRI HIDEAKI; SEKIGUCHI YOSHINOBU; MIYAZAWA SEIICHI; SHIMIZU AKIRA; HAKAMATA ISAO
	1986-07-19
著作权人	CANON KK
专利号	JP1986159785A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device
英文摘要	PURPOSE:To eliminate errors on positioning and the limitation of the density of integration resulting from the arrangement of semiconductor illuminants in a hybrid manner by forming the resonating directions and resonating surfaces of each of a plurality of semiconductor lasers shaped in a monolithic manner so that angles formed by the resonating directions and the resonating surfaces differ. CONSTITUTION:A semiconductor device is formed so that angles shaped by the extensions 11b-15b of current injection regions 11a-15a in semiconductor lasers 11-15 and normals 18 erected to resonating surfaces 16 and 17 are each represented by phia-phie. Since n (the refractive index of a crystal) takes approximately 3.5 and n0 (the refractive index of air) approximately 1 on a projection from a crystal such as a GaAs one, laser beams are projected at an inclination of approximately 3.5 deg. to the normals 18 when phi is selected at 1 deg. Accordingly, each angle phia-phie is set severally at +0 deg., +0.5 deg., 0.0 deg., -0.5 deg. and -0 deg., thus preparing an array laser, projecting angles thetaa-thetae therefrom each take +3.5 deg., +75 deg., 0.0 deg., -75 deg. and -3.5 deg.
公开日期	1986-07-19
申请日期	1985-01-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81108]
专题	半导体激光器专利数据库
作者单位	CANON KK
推荐引用方式 GB/T 7714	HARA TOSHITAMI,NOJIRI HIDEAKI,SEKIGUCHI YOSHINOBU,et al. Semiconductor device. JP1986159785A. 1986-07-19.

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