| Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film |
| Liu, Bin; Hu, Shuwei; Zhou, Jian; Sun, Zhimei
|
| 刊名 | AIP ADVANCES
 |
| 2019
|
| 卷号 | 9 |
| 关键词 | Amorphous materials
Antimony compounds
Calculations
Crystalline materials
Energy utilization
Germanium compounds
Phase change memory
Switching
Tellurium compounds
Van der Waals forces
Ab initio calculations
Amorphous chalcogenide
Density difference
Density variations
High energy consumption
Phase change memory (pcm)
Resistance switching
Reversible phase transition
Phase change materials
|
| ISSN号 | 2158-3226
|
| DOI | 10.1063/1.5092633
|
| URL标识 | 查看原文
|
| 收录类别 | SCIE
; EI
|
| WOS记录号 | WOS:000462880300079
|
| 内容类型 | 期刊论文
|
| URI标识 | http://www.corc.org.cn/handle/1471x/5921133
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| 专题 | 北京航空航天大学
|
推荐引用方式
GB/T 7714 |
Liu, Bin,Hu, Shuwei,Zhou, Jian,et al. Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film[J]. AIP ADVANCES,2019,9.
|
| APA |
Liu, Bin,Hu, Shuwei,Zhou, Jian,&Sun, Zhimei.(2019).Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film.AIP ADVANCES,9.
|
| MLA |
Liu, Bin,et al."Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film".AIP ADVANCES 9(2019).
|
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