Monolithically integrated III-V optoelectronics with SI CMOS

	Monolithically integrated III-V optoelectronics with SI CMOS
	BUDD, RUSSELL A.; LEOBANDUNG, EFFENDI; LI, NING; PLOUCHART, JEAN-OLIVIER; SADANA, DEVENDRA K.
	2016-06-21
著作权人	INTERNATIONAL BUSINESS MACHINES CORPORATION
专利号	US9372307
国家	美国
文献子类	授权发明
其他题名	Monolithically integrated III-V optoelectronics with SI CMOS
英文摘要	A method of forming monolithically integrated III-V optoelectronics with a silicon complementary metal-oxide-semiconductor (CMOS) device. The method may include; forming a buried waveguide in a buried oxide (BOX) layer of a semiconductor-on-insulator (SOI) substrate; forming a first optoelectronic device and a second optoelectronic device adjacent to the buried waveguide; and forming a CMOS device on a semiconductor layer above the BOX layer.
公开日期	2016-06-21
申请日期	2015-03-30
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38669]
专题	半导体激光器专利数据库
作者单位	INTERNATIONAL BUSINESS MACHINES CORPORATION
推荐引用方式 GB/T 7714	BUDD, RUSSELL A.,LEOBANDUNG, EFFENDI,LI, NING,et al. Monolithically integrated III-V optoelectronics with SI CMOS. US9372307. 2016-06-21.