Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

	Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties
	Jian GZ(菅光忠); He QM(何启鸣); Dong H(董航); Tan Y(覃愿); Zhang Y(张颖); Xue HW(薛惠文); Long SB(龙世兵); Lv HB(吕杭炳); Liu Q(刘琦); Liu M(刘明)
刊名	AIP Advances
	2017-12-15
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18184]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Jian GZ,He QM,Dong H,et al. Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties[J]. AIP Advances,2017.
APA	Jian GZ.,He QM.,Dong H.,Tan Y.,Zhang Y.,...&Liu M.(2017).Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties.AIP Advances.
MLA	Jian GZ,et al."Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties".AIP Advances (2017).