Analysis of the contact resistance in amorphous InGaZnO thin film transistors

	Analysis of the contact resistance in amorphous InGaZnO thin film transistors
	Wang W(王伟); Li L(李泠); Lu CY(陆丛研); Xu GW(徐光伟); Ji ZY(姬濯宇); Liu M(刘明); Liu Y(刘宇); Lv HB(吕杭炳)
刊名	Applied Physics Letters
	2015-08-14
语种	英语
公开日期	2016-05-24
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/14911]
专题	微电子研究所_微电子器件与集成技术重点实验室
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wang W,Li L,Lu CY,et al. Analysis of the contact resistance in amorphous InGaZnO thin film transistors[J]. Applied Physics Letters,2015.
APA	Wang W.,Li L.,Lu CY.,Xu GW.,Ji ZY.,...&Lv HB.(2015).Analysis of the contact resistance in amorphous InGaZnO thin film transistors.Applied Physics Letters.
MLA	Wang W,et al."Analysis of the contact resistance in amorphous InGaZnO thin film transistors".Applied Physics Letters (2015).