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	Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm 期刊论文 IEEE PHOTONICS JOURNAL, 2022, 卷号: 14, 期号: 6 作者: Zhao, Yuliang; Yang, Guowen; Zhao, Yongming; Tang, Song; Lan, Yu 收藏 \| 浏览/下载：24/0 \| 提交时间：2022/11/08 Epitaxial growth Resistance Doping Optical losses Optical device fabrication Stacking Optical refraction Epitaxial stacking high efficiency laser diode low optical loss n-doping concentration power scaling specific resistance tunnel junction
	Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文 Microelectronic Engineering, 2019 作者: Kaihua Cao; Hushan Cui; Youguang Zhang; Huagang Xiong; Jiaqi Wei 收藏 \| 浏览/下载：34/0 \| 提交时间：2019/12/17 Side-wall passivation Electrode reveal process Magnetic tunnel junction device Dual dielectrics
	Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文 Microelectronic Engineering, 2019, 卷号: Vol.209, 页码: 6-9 作者: Kaihua Cao; Hushan Cui; Youguang Zhang; Huagang Xiong; Jiaqi Wei 收藏 \| 浏览/下载：34/0 \| 提交时间：2019/12/17 Side-wall passivation Electrode reveal process Magnetic tunnel junction device Dual dielectrics
	Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer 期刊论文 IEEE TRANSACTIONS ON MAGNETICS, 2019, 卷号: 55 作者: Cao, Kaihua; Li, Huisong; Cai, Wenlong; Wei, Jiaqi; Wang, Lezhi 收藏 \| 浏览/下载：29/0 \| 提交时间：2019/12/30 Perpendicular magnetic tunnel junction (p-MTJ) spin transfer torque (STT) spintronics temperature dependence
	Stability and Variability Emphasized STT-MRAM Sensing Circuit with Performance Enhancement 会议论文 2018 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2018, 2018-10-26 作者: Han, M.; Cai, H.; Yang, J.; Naviner, L.; Wang, Y. 收藏 \| 浏览/下载：11/0 \| 提交时间：2019/12/30 Convergence of numerical methods Magnetic anisotropy Magnetic recording Magnetic storage Magnetism Random access storage Timing circuits Tunnel junctions low Vdd performance Magnetic random access memory Magnetic tunnel junction Performance enhancements Perpendicular magnetic anisotropy Process Variation Sensing margin STT-MRAM MRAM devices
	Advanced nanoscale magnetic tunnel junctions for low power computing (Invited) 会议论文 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018 作者: Wang, Z.; Peng, S.; Wang, M.; Zhang, X.; Cai, W. 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/12/30 Magnetic anisotropy Magnetic storage Nanomagnetics Torque Magnetic tunnel junction Perpendicular magnetic anisotropy Skyrmions Spin orbits Spin transfer torque Tunnel junctions
	A spin orbit torque based true random number generator with real-time optimization 会议论文 Proceedings of the IEEE Conference on Nanotechnology, 2018-07-23 作者: Liu, Y.; Wang, Z.; Li, Z.; Wang, X.; Zhao, W. 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/12/30 Cryptography Magnetic devices Nanotechnology Number theory Sampling Stochastic systems Tunnel junctions Magnetic tunnel junction National Institute of Standards and Technology Optimization module Real-time optimization Spin transfer torque Statistical sampling Stochastic switching Transient simulation Random number generation
	Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM 会议论文 IEEE/IFIP International Conference on VLSI and System-on-Chip, VLSI-SoC, 2018-10-08 作者: Deng, E.; Wang, Z.; Kang, W.; Wei, S.; Zhao, W. 收藏 \| 浏览/下载：13/0 \| 提交时间：2019/12/30 CMOS integrated circuits Magnetic devices Magnetic recording NAND circuits Standby power systems Torque Tunnel junctions VLSI circuits Computing system Magnetic tunnel junction Non-volatile flip-flops Spin orbits Spin transfer torque Spintronics device Switching delay Switching power Flip flop circuits
	Novel metallization processes for sub-100 nm magnetic tunnel junction devices 期刊论文 MICROELECTRONIC ENGINEERING, 2019, 卷号: 209, 页码: 6-9 作者: Cao, Kaihua; Cui, Hushan; Zhang, Youguang; Xiong, Huagang; Wei, Jiaqi 收藏 \| 浏览/下载：33/0 \| 提交时间：2019/12/30 Side-wall passivation Electrode reveal process Magnetic tunnel junction device Dual dielectrics
	Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 239-250 作者: Cai, Hao; Wang, You; Naviner, Lirida Alves de Barros; Liu, Xinning; Shan, Weiwei 收藏 \| 浏览/下载：7/0 \| 提交时间：2019/12/30 Fully depleted silicon-on-insulator (FDSOI) magnetic tunnel junction (MTJ) spin transfer torque magnetic random access memory (STT-MRAM) voltage-controlled magnetic anisotropy (VCMA) magnetoelectric random access memory (MeRAM) aging reliability variability

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