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Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 82101
Liu, GP; Wu, J; Zhao, GJ; Liu, SM; Mao, W; Hao, Y; Liu, CB; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H; Wang SM; Zhao QX; Sadeghi M; Larsson A
收藏  |  浏览/下载：180/35  |  提交时间：2010/03/08
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:  Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM
收藏  |  浏览/下载：182/43  |  提交时间：2010/03/08
High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 14, 页码: art.no.141913
Wang SM; Gu QF; Wei YQ; Sadeghi M; Larsson A; Zhao QX; Wang XD; Ma CH; Xing ZG
收藏  |  浏览/下载：134/45  |  提交时间：2010/03/17
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者:  Zhang SM;  Zhao DG
收藏  |  浏览/下载：84/5  |  提交时间：2010/08/12
Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching 期刊论文
thin solid films, 2000, 卷号: 372, 期号: 1-2, 页码: 25-29
作者:  Zhao DG;  Zhang SM
收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12
MOCVD growth of cubic GaN: Materials and devices 会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  Zhao DG;  Zhang SM
收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29

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