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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles 期刊论文 applied physics letters, 2014, 卷号: 105, 期号: 18, 页码: 183901 Liu, X; Zhang, X. W.; Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L. 收藏  |  浏览/下载：14/0  |  提交时间：2015/03/20 Third-order photonic-crystal distributed-feedback quantum cascade lasers 期刊论文 photonics and nanostructures-fundamentals and applications, 2012, 卷号: 10, 期号: 4, 页码: 435-439 Zhang JC (Zhang, J. C.); Liu FQ (Liu, F. Q.); Wang LJ (Wang, L. J.); Zhao LH (Zhao, L. H.); Liu WF (Liu, W. F.); Liu JQ (Liu, J. Q.); Li L (Li, L.); Wang ZG (Wang, Z. G.) 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/26 Index-coupled surface porous grating distributed feedback quantum cascade laser 期刊论文 journal of applied physics, 2012, 卷号: 112, 期号: 10, 页码: 103102 Zhang JC (Zhang, J. C.); Liu FQ (Liu, F. Q.); Zhao LH (Zhao, L. H.); Wang LJ (Wang, L. J.); Yao DY (Yao, D. Y.); Zhai SQ (Zhai, S. Q.); Liu JQ (Liu, J. Q.); Wang ZG (Wang, Z. G.) 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/26 Continuous-wave operation of distributed-feedback quantum cascade laser with ultra-low threshold current density 期刊论文 electronics letters, 2011, 卷号: 47, 期号: 24, 页码: 1338-u56 Zhang JC (Zhang J. C.); Wang LJ (Wang L. J.); Chen JY (Chen J. Y.); Zhao LH (Zhao L. H.); Liu FQ (Liu F. Q.); Liu JQ (Liu J. Q.); Li L (Li L.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：15/0  |  提交时间：2012/02/22 Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278 Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 4H-SiC  homoepitaxial layers  surface morphological defect  optical microscopy  SILICON-CARBIDE  DISLOCATIONS  FILMS   Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Sun, GS (Sun, G. S.); Liu, XF (Liu, X. F.); Gong, QC (Gong, Q. C.); Wang, L (Wang, L.); Zhao, WS (Zhao, W. S.); Li, JY (Li, J. Y.); Zeng, YP (Zeng, Y. P.); Li, JM (Li, J. M.) 收藏  |  浏览/下载：166/18  |  提交时间：2010/03/29 4H-SiC