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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：华南理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A K-NEAREST-NEIGHBOR-POOLING METHOD FOR GRAPH MATCHING (CPCI-S收录) 会议 作者:  Zhang, Ruonan[1];  Wang, Wenmin[1];  Wang, Ronggang[1] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/11 Graph matching  feature pooling  k-nearest neighbors   An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Chenfei[1,2,3];  Ma, Chenyue[2,3];  Xu, Jiaojiao[1];  Wang, Ruonan[2];  Zhao, Xiaojin[2] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/15 Interface Trap  Gate Oxide Trap  Subthreshold Current   Comparison and Insight into Long-Channel MOSFET Drain Current Models (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Lining[1,2];  He, Jin[1,2];  Wu, Wen[1];  Wang, Guozeng[1];  Wu, Wen[1] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/15 MOSFET models  charge-sheet approximation  drain current model   Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Xiufang[1,2];  Ma, Chenyue[2];  Zhao, Wei[2];  Zhang, Chenfei[3];  Wang, Guozeng[2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15 Analytic potential model for asymmetricunderlap gate-all-around MOSFET (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Wang, Shaodi[1,2];  Guo, Xinjie[1,2];  Zhang, Lining[2];  Zhang, Chenfei[1,2];  Liu, Zhiwei[2] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/15 asymmetric  underlap  misalinment  gate-all-around