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浏览/检索结果: 共17条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.18401 作者:  Deng QW;  Hou QF;  Bi Y;  Yin HB 收藏  |  浏览/下载：41/5  |  提交时间：2011/07/05 EFFICIENCY   Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104 作者:  Deng QW 收藏  |  浏览/下载：47/5  |  提交时间：2011/07/05 QUANTUM-WELL-STRUCTURE  ALGAN/GAN HETEROSTRUCTURE  YELLOW LUMINESCENCE  DEEP LEVELS  TRAP  PERFORMANCE  FREQUENCY  EPILAYERS  ORIGIN  DIODES   Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102 Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG 收藏  |  浏览/下载：40/4  |  提交时间：2011/07/05 EPITAXIAL LAYERS  PHOTOLUMINESCENCE  ABSORPTION  CARBON  BAND   InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402 作者:  Hou QF;  Yin HB 收藏  |  浏览/下载：43/6  |  提交时间：2011/07/05 InGaN  solar cell  multiple quantum wells  IN1-XGAXN ALLOYS  BAND-GAP  INN   Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文 physica b-condensed matter, 2011, 卷号: 406, 期号: 1, 页码: 73-76 作者:  Hou QF;  Yin HB;  Deng QW 收藏  |  浏览/下载：92/9  |  提交时间：2011/07/05 Efficiency  Quantum dot  GaN  EFFICIENCY   A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 8, 页码: 3063-3066 Fan, HB; Yang, SY; Zhang, PF; Wei, HY; Liu, XL; Jiao, CM; Zhu, QS; Chen, YH; Wang, ZG 收藏  |  浏览/下载：80/3  |  提交时间：2010/03/08 SINGLE-CRYSTAL  PHASE EPITAXY  SAPPHIRE  NANORODS  FILMS   Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012104 Zhang, PF; Liu, XL; Zhang, RQ; Fan, HB; Yang, AL; Wei, HY; Jin, P; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：60/2  |  提交时间：2010/03/08 Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 92, 期号: 4, 页码: art. no. 042906 Zhang, PF; Liu, XL; Zhang, RQ; Fan, HB; Song, HP; Wei, HY; Jiao, CM; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：39/2  |  提交时间：2010/03/08 INN  ALN  GAN   Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107 Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG 收藏  |  浏览/下载：231/42  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  indium compounds  interface states  semiconductor heterojunctions  silicon compounds  valence bands  wide band gap semiconductors  X-ray photoelectron spectra   Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 16, 页码: art.no.162104 Zhang RQ (Zhang Riqing); Zhang PF (Zhang Panfeng); Kang TT (Kang Tingting); Fan HB (Fan Haibo); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 INN