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浏览/检索结果: 共26条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers 期刊论文 optics letters, 2012, 卷号: 37, 期号: 8, 页码: 1298-1300 Xu, PF; Ji, HM; Xiao, JL; Gu, YX; Huang, YZ; Yang, T 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/17 Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 8, 页码: 081118 Gu YX (Gu, Yong-Xian); Yang XG (Yang, Xiao-Guang); Ji HM (Ji, Hai-Ming); Xu PF (Xu, Peng-Fei); Yang T (Yang, Tao) 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02 High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文 optics letters, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073 Cao YL (Cao, Yulian); Ji HM (Ji, Haiming); Xu PF (Xu, Pengfei); Gu YX (Gu, Yongxian); Ma WQ (Ma, Wenquan); Yang T (Yang, Tao) 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/27 Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.38401 作者:  Wang KF;  Yang XG;  Yang T 收藏  |  浏览/下载：43/1  |  提交时间：2011/07/05 Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201 作者:  Cao YL;  Yang T 收藏  |  浏览/下载：18/0  |  提交时间：2011/07/05 WELL LASERS  DEPENDENCE  DIODE  GAIN   The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文 journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9345-9356 Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Xu B (Xu Bo); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/22 Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110) 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: article no.125 作者:  Chen L 收藏  |  浏览/下载：36/1  |  提交时间：2011/07/05 MAGNETIC-PROPERTIES  GAAS(001)  FILMS  ORDER  NANOCLUSTERS  EPITAXY   Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320 作者:  Yang T 收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05 PHOTOLUMINESCENCE  EMISSION  INALAS   Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102 Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：140/24  |  提交时间：2010/09/07 quantum dot  symmetrized Hamiltonian  Burt-Foreman Hamiltonian  finite element method  spurious solutions  EFFECTIVE-MASS APPROXIMATION  P THEORY   High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：150/30  |  提交时间：2010/04/13 THRESHOLD CURRENT  ROOM-TEMPERATURE  DEPENDENCE  PHOTOLUMINESCENCE