CORC

浏览/检索结果: 共22条,第1-10条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface: Polarization-induced asymmetric distribution of oxygen vacancies 期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125412
Zhang LX (Zhang Lixin); Zhou XF (Zhou Xiang-Feng); Wang HT (Wang Hui-Tian); Xu JJ (Xu Jing-Jun); Li JB (Li Jingbo); Wang EG (Wang E. G.); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载:19/0  |  提交时间:2010/10/11
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载:73/2  |  提交时间:2010/05/24
Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition 期刊论文
thin solid films, 2008, 卷号: 516, 期号: 6, 页码: 925-928
Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL
收藏  |  浏览/下载:29/3  |  提交时间:2010/03/08
Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui)
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/29
Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire 期刊论文
journal of crystal growth, 2007, 卷号: 306, 期号: 1, 页码: 12-15
Wei, HY (Wei, H. Y.); Cong, GW (Cong, G. W.); Zhang, PF (Zhang, P. F.); Hu, WG (Hu, W. G.); Wu, JJ (Wu, J. J.); Jiao, CM (Jiao, C. M.); Liu, XL (Liu, X. L.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.)
收藏  |  浏览/下载:22/0  |  提交时间:2010/03/29
A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 2, 页码: 516-518
Hu, WG (Hu Wei-Guo); Liu, XL (Liu Xiang-Lin); Zhang, PF (Zhang Pan-Feng); Zhao, FA (Zhao Feng-Ai); Jiao, CM (Jiao Chun-Mei); Wei, HY (Wei Hong-Yuan); Zhang, RQ (Zhang Ri-Qing); Wu, JJ (Wu Jie-Jun); Cong, GW (Cong Guang-Wei); Pan, Y (Pan Yi)
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/29
Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.602110
作者:  Han XX;  Wei HY
收藏  |  浏览/下载:710/6  |  提交时间:2010/04/11
Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 5, 页码: 1251-1254
作者:  Wei HY
收藏  |  浏览/下载:61/0  |  提交时间:2010/04/11
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载:29/0  |  提交时间:2010/04/11


©版权所有 ©2017 CSpace - Powered by CSpace