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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition 期刊论文 thin solid films, 2008, 卷号: 516, 期号: 6, 页码: 925-928 Zhang, PF; Wei, HY; Cong, GW; Hu, WG; Fan, HB; Wu, JJ; Zhu, QS; Liu, XL 收藏  |  浏览/下载：29/3  |  提交时间：2010/03/08 X-ray diffraction  metal-organic chemical vapor deposition  zinc oxide  structural properties   Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire 期刊论文 journal of crystal growth, 2007, 卷号: 306, 期号: 1, 页码: 12-15 Wei, HY (Wei, H. Y.); Cong, GW (Cong, G. W.); Zhang, PF (Zhang, P. F.); Hu, WG (Hu, W. G.); Wu, JJ (Wu, J. J.); Jiao, CM (Jiao, C. M.); Liu, XL (Liu, X. L.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.) 收藏  |  浏览/下载：22/0  |  提交时间：2010/03/29 nanostructure   Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.602110 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：710/6  |  提交时间：2010/04/11 P-TYPE CONDUCTION  THIN-FILMS  OHMIC CONTACTS   Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates 期刊论文 nanotechnology, 2006, 卷号: 17, 期号: 5, 页码: 1251-1254 作者:  Wei HY 收藏  |  浏览/下载：61/0  |  提交时间：2010/04/11 OPTICAL-PROPERTIES  RAMAN-SCATTERING  EPILAYERS  LUMINESCENCE  ALINGAN  PHONON  LAYERS  FILMS  ALN  GAN   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Aluminium doping induced enhancement of p-d coupling in ZnO 期刊论文 journal of physics-condensed matter, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 ELECTRONIC-STRUCTURE CALCULATIONS  II-VI SEMICONDUCTORS  THIN-FILMS  PHOTOELECTRON-SPECTROSCOPY  DOPED ZNO  1ST-PRINCIPLES  CONDUCTION  STATES   One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: art.no.231903 Cong, GW; Wei, HY; Zhang, PF; Peng, WQ; Wu, JJ; Liu, XL; Jiao, CM; Hu, WG; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：114/24  |  提交时间：2010/03/17 NANOWIRES   Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340 作者:  Li DB;  Wei HY;  Han XX 收藏  |  浏览/下载：58/22  |  提交时间：2010/03/17 cracks   Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85 Wu, JJ; Li, DB; Lu, Y; Han, XX; Li, JM; Wei, HY; Kang, TT; Wang, XH; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：74/0  |  提交时间：2010/03/17 cracks