×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [13]
内容类型
其他 [9]
期刊论文 [4]
发表日期
2017 [2]
2016 [6]
2015 [5]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共13条,第1-10条
帮助
限定条件
专题:北京大学
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
Comparative Study on RTN Amplitude in Planar and FinFET Devices
其他
2017-01-01
Zhang, Zexuan
;
Zhang, Zhe
;
Guo, Shaofeng
;
Wang, Runsheng
;
Wang, Xingsheng
;
Cheng, Binjie
;
Asenov, Asen
;
Huang, Ru
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit
期刊论文
SOLID-STATE ELECTRONICS, 2017
Al-Ameri, Talib
;
Georgiev, Vihar P.
;
Sadi, Toufik
;
Wang, Yijiao
;
Adamu-Lema, Fikru
;
Wang, Xingsheng
;
Amoroso, Salvatore M.
;
Towie, Ewan
;
Brown, Andrew
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
CMOS
Electrostatics
Nanowire transistors
Performance
Quantum effects
TCAD
GATE
SIMULATION
INVERSION
MULTIGATE
MOSFETS
NM
Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond
其他
2016-01-01
Jiang, Xiaobo
;
Wang, Xingsheng
;
Wang, Runsheng
;
Cheng, Binjie
;
Asenov, Asen
;
Huang, Ru
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
A Simple Method to Decompose the Amplitudes of Different Random Variation Sources in FinFET Technology
其他
2016-01-01
Jiang, Xiaobo
;
Wang, Runsheng
;
Huang, Ru
;
Wang, Xingsheng
;
Cheng, Binjie
;
Asenov, Asen
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2017/12/03
LINE-EDGE ROUGHNESS
VARIABILITY
LWR
LER
New Insights into the Near-Threshold Design in Nanoscale FinFET Technology for Sub-0.2V Applications
其他
2016-01-01
Jiang, Xiaobo
;
Guo, Shaofeng
;
Wang, Runsheng
;
Wang, Yuan
;
Wang, Xingsheng
;
Cheng, Binjie
;
Asenov, Asen
;
Huang, Ru
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
New Approach for Understanding "Random Device Physics" from Channel Percolation Perspectives: Statistical Simulations, Key Factors and Experimental Results
其他
2016-01-01
Zhang, Zhe
;
Zhang, Zexuan
;
Wang, Runsheng
;
Jiang, Xiaobo
;
Guo, Shaofeng
;
Wang, Yangyuan
;
Wang, Xingsheng
;
Cheng, Binjie
;
Asenov, Asen
;
Huang, Ru
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Jiang, Xiaobo
;
Guo, Shaofeng
;
Wang, Runsheng
;
Wang, Xingsheng
;
Cheng, Binjie
;
Asenov, Asen
;
Huang, Ru
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/04
FinFET
random variation
characterization
line-edge roughness (LER)
metal gate granularity (MGG)
LINE-EDGE ROUGHNESS
VARIABILITY
LWR
LER
Investigation on the Amplitude of Random Telegraph Noise(RTN) in Nanoscale MOSFETs——Scaling Limit of “Hole in the Inversion Layer” Model
其他
2016-01-01
Zexuan Zhang
;
Zhe Zhang
;
Shaofeng Guo
;
Runsheng Wang
;
Xingsheng Wang
;
Binjie Cheng
;
Ru Huang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
Inversion
equivalence
drain
Model
RTN
negligible
helpful
scaled
assumed
scaling
Inversion
equivalence
drain
Model
RTN
negligible
helpful
scaled
assumed
scaling
Variation-aware energy-delay optimization method for device/circuit co-design
其他
2015-01-01
Wang, Junyao
;
Jiang, Xiaobo
;
Wang, Xingsheng
;
Wang, Runsheng
;
Cheng, Binjie
;
Asenov, Asen
;
Wei, Lan
;
Huang, Ru
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Wang, Yijiao
;
Al-Ameri, Talib
;
Wang, Xingsheng
;
Georgiev, Vihar P.
;
Towie, Ewan
;
Amoroso, Salvatore Maria
;
Brown, Andrew R.
;
Cheng, Binjie
;
Reid, David
;
Riddet, Craig
;
Shifren, Lucian
;
Sinha, Saurabh
;
Yeric, Greg
;
Aitken, Robert
;
Liu, Xiaoyan
;
Kang, Jinfeng
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
CMOS
electrostatics
nanowire transistors (NWs)
performance
quantum effects
TCAD
STATISTICAL VARIABILITY
INVERSION-LAYERS
GATE
CMOS
GENERATION
ELECTRON
DENSITY
FINFETS
DEVICES
MOSFETS
©版权所有 ©2017 CSpace - Powered by
CSpace