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Comparative Study on RTN Amplitude in Planar and FinFET Devices 其他
2017-01-01
Zhang, Zexuan; Zhang, Zhe; Guo, Shaofeng; Wang, Runsheng; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载:5/0  |  提交时间:2017/12/03
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit 期刊论文
SOLID-STATE ELECTRONICS, 2017
Al-Ameri, Talib; Georgiev, Vihar P.; Sadi, Toufik; Wang, Yijiao; Adamu-Lema, Fikru; Wang, Xingsheng; Amoroso, Salvatore M.; Towie, Ewan; Brown, Andrew; Asenov, Asen
收藏  |  浏览/下载:4/0  |  提交时间:2017/12/03
Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond 其他
2016-01-01
Jiang, Xiaobo; Wang, Xingsheng; Wang, Runsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载:5/0  |  提交时间:2017/12/03
A Simple Method to Decompose the Amplitudes of Different Random Variation Sources in FinFET Technology 其他
2016-01-01
Jiang, Xiaobo; Wang, Runsheng; Huang, Ru; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen
收藏  |  浏览/下载:1/0  |  提交时间:2017/12/03
New Insights into the Near-Threshold Design in Nanoscale FinFET Technology for Sub-0.2V Applications 其他
2016-01-01
Jiang, Xiaobo; Guo, Shaofeng; Wang, Runsheng; Wang, Yuan; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载:2/0  |  提交时间:2017/12/03
New Approach for Understanding "Random Device Physics" from Channel Percolation Perspectives: Statistical Simulations, Key Factors and Experimental Results 其他
2016-01-01
Zhang, Zhe; Zhang, Zexuan; Wang, Runsheng; Jiang, Xiaobo; Guo, Shaofeng; Wang, Yangyuan; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载:4/0  |  提交时间:2017/12/03
A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Jiang, Xiaobo; Guo, Shaofeng; Wang, Runsheng; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载:3/0  |  提交时间:2017/12/04
Investigation on the Amplitude of Random Telegraph Noise(RTN) in Nanoscale MOSFETs——Scaling Limit of “Hole in the Inversion Layer” Model 其他
2016-01-01
Zexuan Zhang; Zhe Zhang; Shaofeng Guo; Runsheng Wang; Xingsheng Wang; Binjie Cheng; Ru Huang
收藏  |  浏览/下载:3/0  |  提交时间:2017/12/03
Variation-aware energy-delay optimization method for device/circuit co-design 其他
2015-01-01
Wang, Junyao; Jiang, Xiaobo; Wang, Xingsheng; Wang, Runsheng; Cheng, Binjie; Asenov, Asen; Wei, Lan; Huang, Ru
收藏  |  浏览/下载:4/0  |  提交时间:2017/12/03
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Wang, Yijiao; Al-Ameri, Talib; Wang, Xingsheng; Georgiev, Vihar P.; Towie, Ewan; Amoroso, Salvatore Maria; Brown, Andrew R.; Cheng, Binjie; Reid, David; Riddet, Craig; Shifren, Lucian; Sinha, Saurabh; Yeric, Greg; Aitken, Robert; Liu, Xiaoyan; Kang, Jinfeng; Asenov, Asen
收藏  |  浏览/下载:4/0  |  提交时间:2017/12/03


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