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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode 期刊论文 NANOSCALE, 2017 Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Sheng-Dong; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Tseng, Yi-Ting; Chang, Yao-Feng; Chen, Ying-Chen; Huang, Hui-Chun; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 METAL-INSULATOR-TRANSITION  MEMORY  OXIDES  NANOCROSSBAR  RERAM   Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2016 Chen, Bo-Wei; Chang, Ting-Chang; Hung, Yu-Ju; Huang, Shin-Ping; Chen, Hua-Mao; Huang, Hui-Chun; Liao, Po-Yung; Chiang, Hsiao-Cheng; Zheng, Yu-Zhe; Yeh, Wei-Heng; Lin, Yu-Ho; Liang, Jonathan Siher; Chu, Ann-Kuo; Li, Hung-Wei; Tsai, Chih-Hung; Lu, Hsueh-Hsing 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Flexible electronics  LTPS TFTs  ELA crystallization  thermal expansion stress  THIN-FILM TRANSISTORS  BIAS TEMPERATURE INSTABILITY  NBTI DEGRADATION   Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2016 Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Zhang, Rui; Wang, Tong; Pan, Chih-Hung; Chen, Kai-Huang; Chen, Hua-Mao; Chen, Min-Chen; Tseng, Yi-Ting; Chen, Po-Hsun; Lo, Ikai; Zheng, Jin-Cheng; Lou, Jen-Chung; Sze, Simon M. 收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03 ITO  RRAM  complementary resistance switching  oxygen  SUPERCRITICAL CO2 FLUID  RRAM  IMPROVEMENT  HYDROGEN  DEVICES  GATE  ELECTRODE  FILAMENT  STORAGE   Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Chen, Ji; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Lou, Jen-Chung; Chu, Tian-Jian; Wu, Cheng-Hsien; Chen, Min-Chen; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 RRAM  nitrogen buffering effect  electric field force  NH3 treatment  SUPERCRITICAL CO2 FLUID  SWITCHING MEMORY  RESISTANCE  IMPROVEMENT  RRAM  MECHANISM  UNIFORMITY  CONDUCTION  DEVICE   Influence of nitrogen buffering on oxygen in indium-tin-oxide capped resistive random access memory with NH3 treatment 其他 2015-01-01 Chen, Ji; Lou, Jen-Chung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Influence of Nitrogen Buffering on Oxygen in Indium-Tin-Oxide Capped Resistive Random Access Memory with NH3 Treatment 其他 2015-01-01 Chen, Ji; Lou, Jen-Chung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 RRAM  nitrogen buffering effect  NH3 treatment   Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device 期刊论文 ieee electron device letters, 2013 Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Nonvolatile memory  resistance switching  tungsten silicon oxide (WSiOx)  MEMORY  RRAM   Characteristics of hafnium oxide resistance random access memory with different setting compliance current 期刊论文 应用物理学快报, 2013 Su, Yu-Ting; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Kai-Huang; Tseng, Bae-Heng; Shih, Chih-Cheng; Yang, Ya-Liang; Chen, Min-Chen; Chu, Tian-Jian; Pan, Chih-Hung; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/11 CO2 FLUID TREATMENT  HOPPING CONDUCTION  RRAM  IMPROVEMENT  MECHANISMS  DEVICES  ORIGIN   Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices 期刊论文 ieee electron device letters, 2013 Chang, Kuan-Chang; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Lou, J. C.; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Yang, Ya-Liang; Pan, Yin-Chih; Chang, Geng-Wei; Chu, Tian-Jian; Shih, Chih-Cheng; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tai, Ya-Hsiang; Sze, Simon M. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 conduction  graphene oxide  hopping  redox reaction  resistance random access memory (RRAM)  RRAM   Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment 期刊论文 ieee electron device letters, 2013 Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Hopping conduction  resistive random access memory (RRAM)  supercritical fluid  RERAM