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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002 Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin 收藏  |  浏览/下载：21/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium nitride   AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839 Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/29 2DEG   MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793 Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 2DEG   Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文 microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841 Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping) 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/29 AlxGa1-xN   Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 235-238 Ran JX (Ran Junxue); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Li JP (Li Jianping); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：136/0  |  提交时间：2010/03/29 doping   RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content 期刊论文 半导体学报, 2005, 卷号: 26, 期号: 6, 页码: 1116-1120 作者:  Liu Jian 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23