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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector 期刊论文 chinese science bulletin, 2014, 卷号: 59, 期号: 28, 页码: 3696-3700 Li, Q; Ma, WQ; Zhang, YH; Cui, K; Huang, JL; Wei, Y; Liu, K; Cao, YL; Wang, WY; Liu, YL; Jin, P 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20 Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文 physica e-low-dimensional systems & nanostructures, 2012, 卷号: 45, 页码: 173-176 Cui K (Cui, Kai); Ma WQ (Ma, Wenquan); Huang JL (Huang, Jianliang); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cao YL (Cao, Yulian); Gu YX (Gu, Yongxian); Yang T (Yang, Tao) 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02 Influence of InAs deposition. thickness on the structural and optical properties of InAs quantum wires 期刊论文 journal of university of science and technology beijing, 2007, 卷号: 14, 期号: 4, 页码: 341-344 Wang YL (Wang Yuanli); Cui H (Cui Hua); Lei W (Lei Wen); Su YH (Su Yahong); Chen YH (Chen Yonghai); Wu J (Wu Ju); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/29 quantum wire   Cleaved-edge overgrowth of aligned InAs islands on GaAs(110) 期刊论文 nanotechnology, 2005, 卷号: 16, 期号: 11, 页码: 2661-2664 作者:  Jin P;  Xu B 收藏  |  浏览/下载：130/28  |  提交时间：2010/03/17 QUANTUM DOTS   Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy 期刊论文 journal of crystal growth, 2004, 卷号: 269, 期号: 2-4, 页码: 181-186 作者:  Ye XL;  Jin P;  Xu B;  Li CM 收藏  |  浏览/下载：184/45  |  提交时间：2010/03/09 photoluminescence   Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Jin P;  Ye XL 收藏  |  浏览/下载：82/12  |  提交时间：2010/03/29 1.3 MU-M