QQ客服 官方微博 反馈留言

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文 ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648 Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia 收藏  |  浏览/下载：20/0  |  提交时间：2013/08/27 Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文 solid-state electronics, 2013, 卷号: 83, 页码: 66-70 Wang, Lanxiang; Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia 收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27 Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文 Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70 Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo 收藏  |  浏览/下载：28/0  |  提交时间：2014/04/04 Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文 ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341 Gong, Xiao; Han, Genquan; Bai, Fan; Su, Shaojian; Guo, Pengfei; Yang, Yue; Cheng, Ran; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Antoniadis, Dimitri; Yeo, Yee-Chia 收藏  |  浏览/下载：28/0  |  提交时间：2013/09/17 Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文 digest of technical papers - symposium on vlsi technology, 2012, 页码: 97-98 Han, Genquan; Su, Shaojian; Wang, Lanxiang; Zhang, Zheng; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia; Wang, Wei; Gong, Xiao; Yang, Yue; Ivana; Guo, Pengfei; Guo, Cheng; Zhang, Guangze; Pan, Jisheng 收藏  |  浏览/下载：24/0  |  提交时间：2013/05/07 Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文 ieee electron device letters, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531 Wang LX (Wang, Lanxiang); Su SJ (Su, Shaojian); Wang W (Wang, Wei); Yang Y (Yang, Yue); Tong Y (Tong, Yi); Liu B (Liu, Bin); Guo PF (Guo, Pengfei); Gong X (Gong, Xiao); Zhang GZ (Zhang, Guangze); Xue CL (Xue, Chunlai); Cheng BW (Cheng, Buwen); Han GQ (Han, Genquan); Yeo YC (Yeo, Yee-Chia) 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/27