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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：27/0  |  提交时间：2013/10/10 Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 thin solid films, 2013, 卷号: 534, 页码: 655–658 Dong Ji, Yanwu Lu, Bing Liu, Guipeng Liu, Qinsheng Zhu, Zhanguo Wang 收藏  |  浏览/下载：17/0  |  提交时间：2014/05/08 Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文 thin solid films, 2013, 卷号: 534, 页码: 655-658 Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：23/0  |  提交时间：2013/08/27 Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors 期刊论文 journal of applied physics, 2012, 卷号: 112, 页码: 024515 Ji, Dong; Lu, Yanwu; Liu, Bing; Jin, Guangri; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：14/0  |  提交时间：2013/05/07 Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors 期刊论文 applied physics letters, 2012, 卷号: 100, 期号: 13, 页码: 132105 Ji, Dong; Liu, Bing; Lu, Yanwu; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo 收藏  |  浏览/下载：16/0  |  提交时间：2013/05/13