QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 6, 页码: 068402 LI Zhi-Dong, XIAO Hong-Ling, WANG Xiao-Liang, WANG Cui-Mei, DENG Qing-Wen, JING Liang, DING Jie-Qin, WANG Zhan-Guo, HOU Xun 收藏  |  浏览/下载：17/0  |  提交时间：2014/03/17 Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 期刊论文 journal of semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 124004 Jing, Liang; Xiao, Hongling; Wang, Xiaoliang; Wang, Cuimei; Deng, Qingwen; Li, Zhidong; Ding, Jieqin; Wang, Zhanguo; Hou, Xun 收藏  |  浏览/下载：16/0  |  提交时间：2014/04/28 The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD 期刊论文 journal of semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 113002 Liang, Jing; Hongling, Xiao; Xiaoliang, Wang; Cuimei, Wang; Qingwen, Deng; Zhidong, Li; Jieqin, Ding; Zhanguo, Wang; Xun, Hou 收藏  |  浏览/下载：15/0  |  提交时间：2014/04/30 Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文 physica b-condensed matter, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924 Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Yin HB (Yin, Haibo); Chen H (Chen, Hong); Feng C (Feng, Chun); Jiang LJ (Jiang, Lijuan) 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/27 Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures 期刊论文 journal of alloys and compounds, 2012, 卷号: 523, 页码: 88-93 Ding, JQ; Wang, XL; Xiao, HL; Wang, CM; Yin, HB; Chen, H; Feng, C; Jiang, LJ 收藏  |  浏览/下载：30/0  |  提交时间：2013/02/07 A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102 Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Chen H (Chen, Hong); Bi Y (Bi, Yang); Deng QW (Deng, Qinwen); Zhang JW (Zhang, Jingwen); Hou X (Hou, Xun) 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/26 A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102 Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun 收藏  |  浏览/下载：13/0  |  提交时间：2013/04/19 Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 101110 Zhang, L.; Ding, K.; Liu, N.X.; Wei, T.B.; Ji, X.L.; Ma, P.; Yan, J.C.; Wang, J.X.; Zeng, Y.P.; Li, J.M. 收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14 Electron injection  Gallium alloys  Gallium nitride  Light  Light emission  Organic light emitting diodes(OLED)  Polarization   Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文 japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001 作者:  Wei XC;  Duan RF;  Ding K 收藏  |  浏览/下载：76/19  |  提交时间：2010/03/08 LOCALIZATION  SEMICONDUCTORS  EMISSION  BOXES  BAND