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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yang, H; Chen, Y; Wang, LB; Yi, XY; Fan, JM; Liu, ZQ; Yang, FH; Wang, LC; Wang, GH; Zeng, YP; Li, JM 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/09 GaN-based LED  grinding  ray tracing   Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Fan, JM; Wang, LC; Guo, JX; Yi, XY; Liu, ZQ; Wang, GH; Li, JM 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/09 GaN-based LED  Micro-LEDs  light extraction efficiency  ray tracing  flip-chip   Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文 chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 565-570 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/17 SOIPMOSFET   Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET 期刊论文 chinese physics letters, 2005, 卷号: 22, 期号: 3, 页码: 654-656 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：108/0  |  提交时间：2010/03/17 SCATTERING   Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文 acta physica sinica, 2005, 卷号: 54, 期号: 1, 页码: 348-353 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/17 SOI