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Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy 期刊论文
journal of bionanoscience, 2012, 卷号: 6, 期号: 1, 页码: 200-216
Zhang, H.Y; Chen, Y.H; Wang, Z.G
收藏  |  浏览/下载：8/0  |  提交时间：2013/04/19
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文
nanoscale research letters, 2012, 卷号: 7
Zhang, Hongyi; Chen, Yonghai; Zhou, Guanyu; Tang, Chenguang; Wang, Zhanguo
收藏  |  浏览/下载：13/0  |  提交时间：2013/05/07
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 600
Zhang HY (Zhang, Hongyi); Chen YH (Chen, Yonghai); Zhou GY (Zhou, Guanyu); Tang CG (Tang, Chenguang); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：14/0  |  提交时间：2013/03/26
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：49/4  |  提交时间：2011/07/05
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05
Structure and properties of InAs/AlAs quantum dots for broadband emission 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 10, 页码: art. no. 103515
Meng XQ (Meng X. Q.); Jin P (Jin P.); Liang ZM (Liang Z. M.); Liu FQ (Liu F. Q.); Wang ZG (Wang Z. G.); Zhang ZY (Zhang Z. Y.)
收藏  |  浏览/下载：25/0  |  提交时间：2010/12/28
Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102
Xu PF (Xu Peng-Fei); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Cao YL (Cao Yu-Lian); Gu; YX (Gu Yong-Xian); Liu Y (Liu Yu); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：204/54  |  提交时间：2010/04/13
Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Jia CH (Jia C. H.); Zhou GY (Zhou G. Y.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：336/26  |  提交时间：2010/08/17
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:  Xu B
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09

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